型号 功能描述 生产厂家 企业 LOGO 操作
NRVBA140N

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

ONSEMI

安森美半导体

NRVBA140N

1.0 A, 40 V, Schottky Power Rectifier, Surface Mount

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

ONSEMI

安森美半导体

封装/外壳:DO-214AC,SMA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 1A 40V 1201 SMA2 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

MOTOROLA

摩托罗拉

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

POWER TRANSISTORS(10A,60-100V,125W)

MOSPEC

统懋

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

MOSPEC

统懋

更新时间:2026-3-15 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
25+
SMA
18798
原装正品现货,原厂订货,可支持含税原型号开票。
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ONSEMI
24+
N/A
170792
原装原装原装
ONSEMI/安森美
25+
SMA-2
43630
ONSEMI/安森美全新特价NRVBA140NT3G即刻询购立享优惠#长期有货
ON/安森美
2049+
SMA-2
60000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ONSEMI/安森美
2025+
SMA-2
5000
原装进口价格优 请找坤融电子!
ON/安森美
2023+
SMA-2
8800
正品渠道现货 终端可提供BOM表配单。
ON(安森美)
25+
SMA
19000
终端可免费供样,支持BOM配单!
ON/安森美
23+
SMA-2
50000
全新原装正品现货,支持订货

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    参数 参数值 包装 标准卷带 系列 汽车级,AEC-Q101 零件状态 有源 二极管类型 肖特基 电压 - DC 反向(Vr)(最大值) 30V 电流 - 平均整流(Io) 1A 不同 If 时的电压 - 正向(Vf 410mV @ 1A 速度 快速恢复 = 200mA(Io) 反向恢复时间(trr) 快速恢复 = 200mA(Io) 不同Vr 时的电流 - 反向漏电流 1

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