isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60 V – 90 A – N-channel Power MOS FET

60 V ??90 A ??N-channel Power MOS FET Application: Automotive

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N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM90N06Q uses advanced trench technology and design to provide excellent RDS(ON) with

Drain Current ?밒D= 90A@ TC=25C

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N-Channel Trench Power MOSFET

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N-Channel Super Trench Power MOSFET

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N-Channel MOSFET

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