60 V – 90 A – N-channel Power MOS FET Application: Automotive

Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for automotive application and A

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60 V – 90 A – N-channel Power MOS FET

N-channel Power MOS FET

文件：374.55 Kbytes Page：9 Pages

60 V – 90 A – N-channel Power MOS FET Application: Automotive

Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for automotive application and A

60 V – 90 A – N-channel Power MOS FET Application: Automotive

Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for automotive application and A

60 V – 90 A – N-channel Power MOS FET Application: Automotive

Description NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)  Designed for automotive application and A

N-channel Power MOS FET

文件：374.55 Kbytes Page：9 Pages

N-channel Power MOS FET

文件：374.55 Kbytes Page：9 Pages

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM90N06Q uses advanced trench technology and design to provide excellent RDS(ON) with

Drain Current ?밒D= 90A@ TC=25C

文件：137.72 Kbytes Page：2 Pages

N-Channel Trench Power MOSFET

文件：634.29 Kbytes Page：6 Pages

N-Channel Super Trench Power MOSFET

文件：324.83 Kbytes Page：6 Pages

N-Channel MOSFET

文件：1.02305 Mbytes Page：4 Pages