| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.4 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) • Designed for automotive application | RENESAS 瑞萨 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.4 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) • Designed for automotive application | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 4.4 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) • Designed for automotive application | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for automotive application and | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) ● Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ● Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for automotive application and | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for automotive application and | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) ● Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ● Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for automotive application and | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) ● Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) ● Designed for automotive application | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Nch Single Power MOSFET 55V 90A 4.4mohm MP-25K/TO-220 Automotive | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：123.87 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | ||
Nch Single Power MOSFET 55V 90A 4.0mohm MP-25ZP/TO-263 Automotive | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：112.13 Kbytes Page：8 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
22+ |
TO-220 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
RENESAS/瑞萨 |
22+ |
TO-220 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
NEC |
23+ |
TO263 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC |
25+ |
VQFN-24 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
Renesas |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
RENESAS/瑞萨 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
UTC/友顺 |
23+ |
TO-252 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
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NP89N055规格书下载地址
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NP89N055数据表相关新闻
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板机接口压力传感器
2019-9-10
DdatasheetPDF页码索引
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