位置：首页 > IC中文资料 > NP75P04YLG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP75P04YLG | MOS FIELD EFFECT TRANSISTOR Description The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) ⎯ RDS(on) = 14 mΩ MAX. (VGS = −5 V, ID = −37.5 A) • Logic level drive type • Gat | RENESAS 瑞萨 |   | |
NP75P04YLG | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
NP75P04YLG | Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR Description The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) ⎯ RDS(on) = 14 mΩ MAX. (VGS = −5 V, ID = −37.5 A) • Logic level drive type • Gat | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) ⎯ RDS(on) = 14 mΩ MAX. (VGS = −5 V, ID = −37.5 A) • Logic level drive type • Gat | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：243.96 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
P-Channel Enhancement Mode Power MOSFET Description The G75P04F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
P-Channel Enhancement Mode Power MOSFET Description The G75P04FI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
P-Channel Enhancement Mode Power MOSFET Description The G75P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
P-Channel Enhancement Mode Power MOSFET Description The G75P04KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
P-Channel Enhancement Mode Power MOSFET Description The G75P04M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
804 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
HSON8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS/瑞萨 |
22+ |
HSON-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
新年份 |
DFN56 |
67410 |
一级代理原装正品现货,支持实单! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
RENESAS/瑞萨 |
22+ |
HSON8 |
12245 |
现货,原厂原装假一罚十! |
|||
RENESAS/瑞萨 |
24+ |
HSON8 |
45310 |
只做全新原装进口现货 |
|||
RENESAS/瑞萨 |
25+ |
SOT23-5 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
RENESAS |
20+ |
DFN56 |
32550 |
原装优势主营型号-可开原型号增税票 |
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NP75P04YLG规格书下载地址
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DdatasheetPDF页码索引
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