位置：首页 > IC中文资料第5155页 > NP60N055VUK
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP60N055VUK | MOS FIELD EFFECT TRANSISTOR Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) Designed for automotive application a | RENESAS 瑞萨 |   | |
NP60N055VUK | MOS FIELD EFFECT TRANSISTOR Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 5.5 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) • Designed for automotive application | RENESAS 瑞萨 | | |
NP60N055VUK | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NP60N055VUK | Nch Single Power MOSFET 55V 60A 5.5mohm MP-3ZP/TO-252 Automotive | RENESAS 瑞萨 | | |
NP60N055VUK | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) Designed for automotive application a | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) Designed for automotive application a | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 5.5 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) • Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 5.5 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) • Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) Designed for automotive application a | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：123.31 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) ● Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) ● Designed for automotive application | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | |
NP60N055VUK产品属性
- 类型
描述
- 型号
NP60N055VUK
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET N-CH 55V 60A 3-Pin(2+Tab) TO-252 T/R
- 制造商
Renesas Electronics Corporation
- 功能描述
POWER MOSFET - Tape and Reel
- 制造商
Renesas Electronics Corporation
- 功能描述
MOSFET N-CH 55V 60A TO-252
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
4000 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
TO252 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS/瑞萨 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
22+ |
TO-252 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
Renesas |
1716+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
RENESAS |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
7000 |
||||
RENESAS |
24+ |
TO-263 |
16900 |
原装正品现货支持实单 |
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NP60N055VUK规格书下载地址
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