位置：首页 > IC中文资料第2825页 > NP55N03SUG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP55N03SUG | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
NP55N03SUG | Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
NP55N03SUG | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
SWITCHING N-CHANNEL POWER MOS FET 文件：322.93 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：322.93 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：322.93 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible Appl | PHILIPS 飞利浦 | | ||
N-channel enhancement mode field-effect transistor Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching. | PHILIPS 飞利浦 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended | PHILIPS 飞利浦 | | ||
N-channel enhancement mode field-effect transistor Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching. | PHILIPS 飞利浦 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a | PHILIPS 飞利浦 | |
NP55N03SUG产品属性
- 类型
描述
- 型号
NP55N03SUG
- 功能描述
MOSFET N-CH 30V 55A TO-252
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
TO-252 |
37698 |
RENESAS/瑞萨全新特价NP55N03SUG-E1-AY即刻询购立享优惠#长期有货 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Renesas |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
RENESAS/瑞萨 |
22+ |
LQFP |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
RENESAS/瑞萨 |
23+ |
DPAK |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
RENESAS/瑞萨 |
22+ |
TO-252 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
NEC |
25+ |
TO-252 |
2500 |
全新原装正品支持含税 |
|||
RENESAS |
23+ |
DPAK |
9729 |
专做原装正品,假一罚百! |
|||
RENESAS/瑞萨 |
25+ |
TO-252 |
33500 |
全新进口原装现货,假一罚十 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
NP55N03SUG规格书下载地址
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DdatasheetPDF页码索引
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