MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP36P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 17.0 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 23.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance

-40V – -36A – P-channel Power MOS FET Application : Automotive

 Super low on-state resistance : RDS(on) = 17.0 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 23.5 m Max. ( VGS = -4.5 V, ID = -18 A )  Low input capacitance : Ciss = 2800 pF Typ.  Designed for automotive application and AEC-Q101 qualified.  Pb-free (This product does not contain Pb in th

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -36A@ TC=25℃ ·Drain Source Voltage -VDSS= -40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs for Automotive

The NP36P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. • Super low on-state resistance RDS(on)1 = 17.0 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 23.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)\n• Low input capacitance Ciss = 2800 pF TYP.;

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

-40V – -36A – P-channel Power MOS FET Application : Automotive

 Super low on-state resistance : RDS(on) = 17.0 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 23.5 m Max. ( VGS = -4.5 V, ID = -18 A )  Low input capacitance : Ciss = 2800 pF Typ.  Designed for automotive application and AEC-Q101 qualified.  Pb-free (This product does not contain Pb in th

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP36P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 17.0 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 23.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP36P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 17.0 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 23.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance

SWITCHING P-CHANNEL POWER MOSFET

文件：299.6 Kbytes Page：9 Pages

SWITCHING P-CHANNEL POWER MOSFET

文件：299.6 Kbytes Page：9 Pages

SWITCHING P-CHANNEL POWER MOSFET

文件：299.6 Kbytes Page：9 Pages

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -36A@ TC=25℃ ·Drain Source Voltage -VDSS= -40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages