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位置：首页 > IC中文资料第10090页 > NP22N055

NP22N055价格

参考价格：￥1.8111

型号：NP22N055-SLE-E1-AZ 品牌：Renesas 备注：这里有NP22N055多少钱，2025年最近7天走势，今日出价，今日竞价，NP22N055批发/采购报价，NP22N055行情走势销售排行榜，NP22N055报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NP22N055HHE

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in

NEC

瑞萨

NP22N055HHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low C

RENESAS

瑞萨

NP22N055HHE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 39mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP22N055HHE

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter

VBSEMI

微碧半导体

NP22N055HLE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP22N055HLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)

RENESAS

瑞萨

NP22N055IHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low C

RENESAS

瑞萨

NP22N055IHE

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in

NEC

瑞萨

NP22N055IHE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 39mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP22N055ILE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP22N055ILE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)

RENESAS

瑞萨

NP22N055SHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low C

RENESAS

瑞萨

NP22N055SHE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 39mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP22N055SLE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP22N055SLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)

RENESAS

瑞萨

NP22N055HHE_15

SWITCHING N-CHANNEL POWER MOSFET

文件：296.03 Kbytes Page：9 Pages

RENESAS

瑞萨

NP22N055HLE

N-Channel 60 V (D-S) MOSFET

文件：961.02 Kbytes Page：7 Pages

VBSEMI

微碧半导体

NP22N055HLE_15

SWITCHING N-CHANNEL POWER MOSFET

文件：297.89 Kbytes Page：9 Pages

RENESAS

瑞萨

NP22N055ILE

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

NP22N055SHE

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

RENESAS

瑞萨

NP22N055SHE

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

NP22N055SLE

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

NP22N055SLE

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

RENESAS

瑞萨

NP22N055SLE

N-Channel 60-V (D-S) MOSFET

文件：897.27 Kbytes Page：6 Pages

VBSEMI

微碧半导体

NP22N055SLE-E1-AY

N-Channel 60-V (D-S) MOSFET

文件：897.27 Kbytes Page：6 Pages

VBSEMI

微碧半导体

NP22N055SLE-E1-AZ

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

ETC

知名厂家

NP22N055SLE-E2-AY

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

ETC

知名厂家

22N055

N-Channel 60 V (D-S) MOSFET

文件：960.33 Kbytes Page：7 Pages

VBSEMI

微碧半导体

NP22N055产品属性

  • 类型

    描述

  • 型号

    NP22N055

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 22A I(D) | TO-251AA

NP22N055供应商更多...

更新时间：2025-12-27 14:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
NP22N055ILE-E1-AY
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
洪芯国际半导体（深圳）有限公司
NP22N055S2E-E1
NEC
25+
TO-3P
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
询价
深圳市宏世佳电子科技有限公司
NP22N055IHE
NEC
2025+
TO-252-2
5425
全新原厂原装产品、公司现货销售
询价
深圳市恒达亿科技有限公司
NP22N055ILE
NEC
25+
TO-251
4500
全新原装、诚信经营、公司现货销售
询价
深圳市纳艾斯科技有限公司
NP22N055S2E-E1
NEC
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
中天科工半导体（深圳）有限公司
NP22N055ILE
恩XP
20+
TO-252
63258
原装优势主营型号-可开原型号增税票
询价
深圳市河锋鑫科技有限公司
NP22N055IHE
NEC
17+
TO-252
31518
原装正品 可含税交易
询价
深圳市创新迹电子有限公司
NP22N055ILE
恩XP
22+
TO-252
20000
只做原装
询价
深圳市博中泰实业有限公司
NP22N055IHE
RENE
24+
TO-252
60000
全新原装现货
询价
深圳市一线半导体有限公司
NP22N055SHE
NEC
24+
TO-252
8866
询价

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