型号 功能描述 生产厂家 企业 LOGO 操作
NP109N055PUK

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.2 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive application

RENESAS

瑞萨

NP109N055PUK

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application an

RENESAS

瑞萨

NP109N055PUK

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP109N055PUK

Nch Single Power MOSFET 55V 110A 2.2mohm MP-25ZP/TO-263 Automotive

RENESAS

瑞萨

NP109N055PUK

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application an

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application an

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.2 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive application

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.2 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive application

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application an

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

文件:121.41 Kbytes Page:8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

NP109N055PUK产品属性

  • 类型

    描述

  • 型号

    NP109N055PUK

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    MOS FIELD EFFECT TRANSISTOR

更新时间:2025-11-22 10:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
23+
TO-220SM
69820
终端可以免费供样,支持BOM配单!
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
RENESAS/瑞萨
2022+
TO-263
50000
原厂代理 终端免费提供样品
Renesas
21+
800
只做原装鄙视假货15118075546
NK/南科功率
2025+
TO-263-2
986966
国产
ON/安森美
23+
6665
全新原装正品现货,支持订货
NATLINEAR/南麟
24+
ESOP-8
30000
专营NATLINEAR南麟原装保障
RENESAS/瑞萨
23+
TO-263
32687
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
20+
SMBDO-214AA
36800
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
22+
TO-263
12500
瑞萨全系列在售,终端可出样品

NP109N055PUK数据表相关新闻