位置：首页 > IC中文资料第8404页 > NP109N055PUK
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP109N055PUK | MOS FIELD EFFECT TRANSISTOR Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.2 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive application | RENESAS 瑞萨 |   | |
NP109N055PUK | MOS FIELD EFFECT TRANSISTOR Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for automotive application an | RENESAS 瑞萨 | | |
NP109N055PUK | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NP109N055PUK | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for automotive application an | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for automotive application an | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.2 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.2 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive application | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for automotive application an | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：121.41 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | |
NP109N055PUK产品属性
- 类型
描述
- 型号
NP109N055PUK
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
25+ |
SMB60MTHY |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
Renesas |
21+ |
800 |
全新原装鄙视假货 |
||||
RENESAS(瑞萨)/IDT |
24+ |
TO263 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
NATLINEAR/南麟 |
24+ |
ESOP-8 |
30000 |
专营NATLINEAR南麟原装保障 |
|||
ON |
16+ |
SMB |
33245 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
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NP109N055PUK规格书下载地址
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DdatasheetPDF页码索引
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