型号 功能描述 生产厂家&企业 LOGO 操作
NP109N055PUK

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.2 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive application

RENESAS

瑞萨

NP109N055PUK

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application an

RENESAS

瑞萨

NP109N055PUK

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP109N055PUK

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application an

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application an

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.2 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive application

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.2 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive application

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)  Designed for automotive application an

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

文件:121.41 Kbytes Page:8 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

NP109N055PUK产品属性

  • 类型

    描述

  • 型号

    NP109N055PUK

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    MOS FIELD EFFECT TRANSISTOR

更新时间:2025-8-17 9:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
25+
SMB60MTHY
188600
全新原厂原装正品现货 欢迎咨询
Renesas
21+
800
全新原装鄙视假货
RENESAS(瑞萨)/IDT
24+
TO263
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
RENESAS/瑞萨
22+
TO-263
100000
代理渠道/只做原装/可含税
RENESAS/瑞萨
22+
TO-263
12500
瑞萨全系列在售,终端可出样品
NATLINEAR/南麟
24+
ESOP-8
30000
专营NATLINEAR南麟原装保障
ON
16+
SMB
33245
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
RENESAS/瑞萨
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
RENESAS/瑞萨
2022+
TO-263
50000
原厂代理 终端免费提供样品
NK/南科功率
2025+
TO-263-2
986966
国产

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