Stand-alone dual-core Bluetooth® 5.2 Low Energy and IEEE 802.15.4 module

Applications NORA-B1 series modules provide scalable solutions for a broad range of market segments, including smart cities and buildings, industrial automation, telematics, medical and healthcare. Specific application areas include: • Industrial automation • Advanced wearables • Smart buil

Module with FEM (PA/LNA) and internal PCB antenna. Under development.

Stand-alone dual-core Bluetooth® 5.2 Low Energy and IEEE 802.15.4 module

Applications NORA-B1 series modules provide scalable solutions for a broad range of market segments, including smart cities and buildings, industrial automation, telematics, medical and healthcare. Specific application areas include: • Industrial automation • Advanced wearables • Smart buil

封装/外壳：94-SMD 模块 包装：袋 描述：DUAL CORE BLE 5.2 MODULE, PCBANT RF/IF，射频/中频和 RFID 射频收发器模块和调制解调器

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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