位置:首页 > IC中文资料第5810页 > NIF62514
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NIF62514 | Self-protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit pr | ONSEMI 安森美半导体 | ||
NIF62514 | Self-protected FET, Temp and Current Limit, Voltage Clamp, ESD, SOT-223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circui | ONSEMI 安森美半导体 | ||
NIF62514 | 自保护 FET,电流和温度限值,42 V 箝位,ESD NIF62514 属于先进的功率 MOSFET 系列,采用安森美半导体的最新 MOSFET 技术工艺,可实现每单位硅面积最低的导通电阻,同时集成了很多智能特性。集成的温度和电流限值一起提供短路保护。此类器件具有集成的漏极-门极箝位,使其能够耐受雪崩模式下的高能量。该箝位还可针对非预期的瞬变电压提供附加安全裕度。静电 (ESD) 保护通过集成的门极-源极箝位提供。 • Current Limitation\n• Thermal Shutdown with Automatic Restart\n• Short Circuit Protection\n• Overvoltage Clamped Protection\n• IDSS Specified at Elevated Temperature\n• Avalanche Energy Specified\n• Slew Rate Control for Low Noise Switching\n• ESD protected\n• Pb-Free Packages are Available; | ONSEMI 安森美半导体 | ||
NIF62514 | Self?뭦rotected FET with Temperature and Current Limit 文件:75.71 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | ||
Self-protected FET, Temp and Current Limit, Voltage Clamp, ESD, SOT-223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circui | ONSEMI 安森美半导体 | |||
Self-protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit pr | ONSEMI 安森美半导体 | |||
Self-protected FET, Temp and Current Limit, Voltage Clamp, ESD, SOT-223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circui | ONSEMI 安森美半导体 | |||
Self-protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit pr | ONSEMI 安森美半导体 | |||
Self-protected FET, Temp and Current Limit, Voltage Clamp, ESD, SOT-223 HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circui | ONSEMI 安森美半导体 | |||
Self?뭦rotected FET with Temperature and Current Limit 文件:75.71 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Self?뭦rotected FET with Temperature and Current Limit 文件:75.71 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Self?뭦rotected FET with Temperature and Current Limit 文件:75.71 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-261-4,TO-261AA 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路(IC) 配电开关,负载驱动器 | ONSEMI 安森美半导体 | |||
N-Channel 60-V (D-S) MOSFET 文件:1.0879 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
封装/外壳:TO-261-4,TO-261AA 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路(IC) 配电开关,负载驱动器 | ONSEMI 安森美半导体 | |||
Self?뭦rotected FET with Temperature and Current Limit 文件:75.71 Kbytes Page:6 Pages | ONSEMI 安森美半导体 |
NIF62514产品属性
- 类型
描述
- 型号
NIF62514
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
Self-protected FET with Temperature and Current Limit
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
SOT-223 |
89630 |
当天发货全新原装现货 |
|||
ON |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
onsemi |
25+ |
SOT-223(TO-261) |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON(安森美) |
24+ |
标准封装 |
7348 |
全新原装正品/价格优惠/质量保障 |
|||
ON |
24+ |
SOT-223 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ON/安森美 |
NA |
275000 |
一级代理原装正品,价格优势,长期供应! |
||||
ONS |
25+ |
66880 |
原装正品,欢迎询价 |
||||
ON |
24+/25+ |
689 |
原装正品现货库存价优 |
||||
ONSEMI/安森美 |
25+ |
SOT-223 |
20300 |
ONSEMI/安森美原装特价NIF62514T1G即刻询购立享优惠#长期有货 |
|||
ONS |
25+ |
NIF62514T1 |
13528 |
振宏微原装正品,假一罚百 |
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NIF62514规格书下载地址
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2020-9-10
DdatasheetPDF页码索引
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