位置:NIF62514T1G > NIF62514T1G详情

NIF62514T1G中文资料

厂家型号

NIF62514T1G

文件大小

232.42Kbytes

页面数量

8

功能描述

Self-protected FET, Temp and Current Limit, Voltage Clamp, ESD, SOT-223

MOSFET 42V 6A N-Channel

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

NIF62514T1G数据手册规格书PDF详情

HDPlus devices are an advanced series of power MOSFETs which

utilize ON Semiconductor’s latest MOSFET technology process to

achieve the lowest possible on−resistance per silicon area while

incorporating smart features. Integrated thermal and current limits

work together to provide short circuit protection. The devices feature

an integrated Drain−to−Gate Clamp that enables them to withstand

high energy in the avalanche mode. The Clamp also provides

additional safety margin against unexpected voltage transients.

Electrostatic Discharge (ESD) protection is provided by an integrated

Gate−to−Source Clamp.

Features

• Current Limitation

• Thermal Shutdown with Automatic Restart

• Short Circuit Protection

• Low RDS(on)

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

• Slew Rate Control for Low Noise Switching

• Overvoltage Clamped Protection

• This is a Pb−Free Device

NIF62514T1G产品属性

  • 类型

    描述

  • 型号

    NIF62514T1G

  • 功能描述

    MOSFET 42V 6A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-22 17:05:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ONSEMI/安森美
25+
SOT-223
20300
ONSEMI/安森美原装特价NIF62514T1G即刻询购立享优惠#长期有货
ONSEMI
23+
NA
638
专做原装正品,假一罚百!
ONSEMI/安森美
24+
SOT-223
60000
全新原装现货
ONSemiconductor
24+
SOT-223
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
VBSEMI
19+
SOT-223
30000
ON(安森美)
24+
标准封装
7348
全新原装正品/价格优惠/质量保障
NK/南科功率
2025+
SOT-223
3000
国产南科平替供应大量
ON
SOT223
3000
原装长期供货!
ON
24+/25+
689
原装正品现货库存价优
ON
24+
SOT-223(TO-261)4L
8866