Self-Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

自保护 Fet，带温度和电流限值 42 V 2.0 A 单 N 沟道

Self-Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating

Self-Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating

Self-Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

Self−Protected FET with Temperature and Current Limit

封装/外壳：TO-261-4，TO-261AA 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路（IC） 配电开关，负载驱动器

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

N-Channel 60-V (D-S) MOSFET

文件：1.01038 Mbytes Page：8 Pages

封装/外壳：TO-261-4，TO-261AA 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路（IC） 配电开关，负载驱动器

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

N-Channel 60-V (D-S) MOSFET

文件：1.01044 Mbytes Page：8 Pages

Crystal Oscillator Module ICs

OVERVIEW The SM5002L series crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS. They comprise low-voltage low-current consumption oscillator circuits and output buffers. They incorporate built-in oscillation capacitance with superior frequency response to realize stable 3rd

Crystal Oscillator Module ICs

OVERVIEW The SM5002L series crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS. They comprise low-voltage low-current consumption oscillator circuits and output buffers. They incorporate built-in oscillation capacitance with superior frequency response to realize stable 3rd

Crystal Oscillator Module ICs

OVERVIEW The SM5002L series crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS. They comprise low-voltage low-current consumption oscillator circuits and output buffers. They incorporate built-in oscillation capacitance with superior frequency response to realize stable 3rd

Crystal Oscillator Module ICs

OVERVIEW The SM5002L series crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS. They comprise low-voltage low-current consumption oscillator circuits and output buffers. They incorporate built-in oscillation capacitance with superior frequency response to realize stable 3rd

Crystal Oscillator Module ICs

OVERVIEW The SM5002L series crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS. They comprise low-voltage low-current consumption oscillator circuits and output buffers. They incorporate built-in oscillation capacitance with superior frequency response to realize stable 3rd