Self-Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating

自保护 Fet，带温度和电流限值 42 V 2.0 A 单 N 沟道

NIF5002 属于先进的功率 MOSFET 系列，该系列利用安森美半导体的最新 MOSFET 技术工艺实现了最低的硅导通电阻，同时还集成了智能功能。集成的温度和电流限值一起提供短路保护。 该器件具有集成的漏极-门极箝位，使其能够耐受雪崩模式下的高能量。 该箝位还可针对意外电压瞬变提供额外安全裕度。 集成的门极-源极箝位提供静电放电 (ESD) 保护。 • Current Limitation\n• Short Circuit Protection\n• Avalanche Energy Specified\n• Overvoltage Clamped Protection\n• Pb-Free Packages are Available;

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

Self-Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating

Self-Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating

Self−Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit\n42 V, 2.0 A, Single N−Channel, SOT−223HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smar • Current Limitation\n• Thermal Shutdown with Automatic Restart\n• Short Circuit Protection\n• IDSS Specified at Elevated Temperature\n• Avalanche Energy Specified\n• Slew Rate Control for Low Noise Switching\n• Overvoltage Clamped Protection\n• Pb−Free Packages are AvailableApplications\n• Lighting;

Self-Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

N-Channel 60-V (D-S) MOSFET

文件：1.01038 Mbytes Page：8 Pages

封装/外壳：TO-261-4，TO-261AA 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路（IC） 配电开关，负载驱动器

封装/外壳：TO-261-4，TO-261AA 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路（IC） 配电开关，负载驱动器

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes Page：5 Pages

N-Channel 60-V (D-S) MOSFET

文件：1.01044 Mbytes Page：8 Pages

Crystal Oscillator Module ICs

OVERVIEW The SM5002L series crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS. They comprise low-voltage low-current consumption oscillator circuits and output buffers. They incorporate built-in oscillation capacitance with superior frequency response to realize stable 3rd

Crystal Oscillator Module ICs

OVERVIEW The SM5002L series crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS. They comprise low-voltage low-current consumption oscillator circuits and output buffers. They incorporate built-in oscillation capacitance with superior frequency response to realize stable 3rd

Crystal Oscillator Module ICs

OVERVIEW The SM5002L series crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS. They comprise low-voltage low-current consumption oscillator circuits and output buffers. They incorporate built-in oscillation capacitance with superior frequency response to realize stable 3rd

Crystal Oscillator Module ICs

OVERVIEW The SM5002L series crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS. They comprise low-voltage low-current consumption oscillator circuits and output buffers. They incorporate built-in oscillation capacitance with superior frequency response to realize stable 3rd

Crystal Oscillator Module ICs

OVERVIEW The SM5002L series crystal oscillator module ICs fabricated in NPC’s Molybdenum-gate CMOS. They comprise low-voltage low-current consumption oscillator circuits and output buffers. They incorporate built-in oscillation capacitance with superior frequency response to realize stable 3rd