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NGB8206AN价格
参考价格:¥6.9854
型号:NGB8206ANSL3G 品牌:ON 备注:这里有NGB8206AN多少钱,2026年最近7天走势,今日出价,今日竞价,NGB8206AN批发/采购报价,NGB8206AN行情走势销售排行榜,NGB8206AN报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NGB8206AN | Gate?묮mitter ESD Protection Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current s | LITTELFUSE 力特 | ||
NGB8206AN | Ignition IGBT 20 A, 350 V, N.Channel D2PAK | ONSEMI 安森美半导体 | ||
NGB8206AN | Ignition IGBT 20 A, 350 V, N.Channel D2PAK 文件:130.3 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | ||
Ignition IGBT 20 A, 350 V, N.Channel D2PAK 文件:130.3 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Ignition IGBT 文件:129.57 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
Ignition IGBT 文件:129.57 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 390V 20A 150W D2PAK3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | LITTELFUSE 力特 | |||
Ignition IGBT 20 A, 350 V, N.Channel D2PAK 文件:130.3 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
点火IGBT | LITTELFUSE 力特 | |||
Ignition IGBT 20 A, 350 V, N.Channel D2PAK 文件:130.3 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Ignition IGBT 文件:129.57 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
点火IGBT | LITTELFUSE 力特 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 390V 20A 150W D2PAK3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | LITTELFUSE 力特 | |||
Tone ringer IC for telephone set The BA8206 and BA8206F are tone ringer ICs which produce a bell sound from a ringing signal. The frequency of the bell sound can be varied by changing the constants of the external resistance and capacitors. The operation initiation current dissipation can be changed at the RSL pin. Also, the outp | ROHM 罗姆 | |||
Tone ringer IC for telephone set The BA8206 and BA8206F are tone ringer ICs which produce a bell sound from a ringing signal. The frequency of the bell sound can be varied by changing the constants of the external resistance and capacitors. The operation initiation current dissipation can be changed at the RSL pin. Also, the outp | ROHM 罗姆 | |||
Ultra fast high-voltage soft-recovery controlled avalanche rectifiers DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas. | PHILIPS 飞利浦 | |||
6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts) The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol | MOTOROLA 摩托罗拉 | |||
New Application of Rem ote Fan Controller BA8206 BA4 文件:124.17 Kbytes Page:4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |
NGB8206AN产品属性
- 类型
描述
- 型号
NGB8206AN
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
D2PAK |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
24+ |
TO263 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
ON/安森美 |
23+ |
TO263 |
32732 |
原装正品代理渠道价格优势 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
LITTELFUSE |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ON/LITTELFUSE |
22+ |
TO-263 |
12500 |
原装正品支持实单 |
|||
ON/安森美 |
23+ |
TO263 |
27750 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON/安森美 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
Littelfuse Inc. |
22+ |
D2PAK |
9000 |
原厂渠道,现货配单 |
NGB8206AN规格书下载地址
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