Description

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features

• Ideal for Coil−on−Plug and Driver−on−Coil Applications

• Gate−Emitter ESD Protection

• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• These are Pb−Free Devices

Applications

• Ignition Systems