4W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

N-CHANNEL GaAs MESFET

4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To

14.0-14.5GHz, 4W Internally Matched Power FET

14.0-14.5GHz, 4W Internally Matched Power FET • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 27 TYPICAL) • EIB FEATURES HIGH IP3(49dBm TYPICAL) • +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

14.0-14.5GHz, 4W Internally Matched Power FET

14.0-14.5GHz, 4W Internally Matched Power FET • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 27 TYPICAL) • EIB FEATURES HIGH IP3(49dBm TYPICAL) • +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

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14.00-14.50GHz 4-Watt Internally-Matched Power FET

文件：181.8 Kbytes Page：4 Pages

14.00-14.50GHz 4-Watt Internally-Matched Power FET

文件：181.8 Kbytes Page：4 Pages