型号 功能描述 生产厂家 企业 LOGO 操作
NESG4030M14

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • Maximum stable power gain: MSG =

NEC

瑞萨

NESG4030M14

NPN SILICON GERMANIUM C RF TRANSISTOR

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • Maximum stable power gain: MSG

RENESAS

瑞萨

NESG4030M14

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

RENESAS

瑞萨

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • Maximum stable power gain: MSG =

NEC

瑞萨

NPN SILICON GERMANIUM C RF TRANSISTOR

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • Maximum stable power gain: MSG

RENESAS

瑞萨

NPN SILICON GERMANIUM C RF TRANSISTOR

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • Maximum stable power gain: MSG

RENESAS

瑞萨

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • Maximum stable power gain: MSG =

NEC

瑞萨

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • Maximum stable power gain: MSG =

NEC

瑞萨

NPN SILICON GERMANIUM C RF TRANSISTOR

NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • Maximum stable power gain: MSG

RENESAS

瑞萨

NESG4030M14产品属性

  • 类型

    描述

  • 型号

    NESG4030M14

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    NPN SiGe

更新时间:2026-1-3 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NHIA
24+
NA/
5750
原装现货,当天可交货,原型号开票
NICHIA/日亚
24+
NA
990000
明嘉莱只做原装正品现货
NICHIA
23+
1206
9868
专做原装正品,假一罚百!
NICHIA
SMD-2
35560
一级代理 原装正品假一罚十价格优势长期供货
NICHIA
10+
3014(0.52)
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NICHICON
原厂封装
9800
原装进口公司现货假一赔百
NICHIA
2023+
3014(0.52)
8800
正品渠道现货 终端可提供BOM表配单。
NICHIA
12+
SMD
870
NICHIA
24+
3014(0.52)
60000
NICHIA
23+
3014(0.52)
50000
全新原装正品现货,支持订货

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