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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG4030M14 | NPNSiGe:CRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION4-PINLEAD-LESSMINIMOLD(M14,1208PKG) NPNSiGe:CRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=1.1dBTYP.,Ga=11.5dBTYP.@VCE=2V,IC=6mA,f=5.8GHz •Maximumstablepowergain:MSG= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NESG4030M14 | NPNSILICONGERMANIUMCRFTRANSISTOR NPNSiGe:CRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=1.1dBTYP.,Ga=11.5dBTYP.@VCE=2V,IC=6mA,f=5.8GHz •Maximumstablepowergain:MSG | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
NPNSILICONGERMANIUMCRFTRANSISTOR NPNSiGe:CRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=1.1dBTYP.,Ga=11.5dBTYP.@VCE=2V,IC=6mA,f=5.8GHz •Maximumstablepowergain:MSG | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSiGe:CRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION4-PINLEAD-LESSMINIMOLD(M14,1208PKG) NPNSiGe:CRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=1.1dBTYP.,Ga=11.5dBTYP.@VCE=2V,IC=6mA,f=5.8GHz •Maximumstablepowergain:MSG= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSiGe:CRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION4-PINLEAD-LESSMINIMOLD(M14,1208PKG) NPNSiGe:CRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=1.1dBTYP.,Ga=11.5dBTYP.@VCE=2V,IC=6mA,f=5.8GHz •Maximumstablepowergain:MSG= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSILICONGERMANIUMCRFTRANSISTOR NPNSiGe:CRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=1.1dBTYP.,Ga=11.5dBTYP.@VCE=2V,IC=6mA,f=5.8GHz •Maximumstablepowergain:MSG | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSILICONGERMANIUMCRFTRANSISTOR NPNSiGe:CRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=1.1dBTYP.,Ga=11.5dBTYP.@VCE=2V,IC=6mA,f=5.8GHz •Maximumstablepowergain:MSG | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSiGe:CRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION4-PINLEAD-LESSMINIMOLD(M14,1208PKG) NPNSiGe:CRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=1.1dBTYP.,Ga=11.5dBTYP.@VCE=2V,IC=6mA,f=5.8GHz •Maximumstablepowergain:MSG= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NESG4030M14产品属性
- 类型
描述
- 型号
NESG4030M14
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
NPN SiGe
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NICHIA |
10+ |
3014(0.52) |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS丨全系列供应 |
23+ |
RENESAS丨全系列供应 |
2985 |
原厂授权代理分销现货只做原装正迈科技样品支持现货 |
|||
NICHIA/日亚 |
22+21+ |
3014(0.52 |
56308 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
NCC/黑金刚 |
1535+ |
1545 |
|||||
SGMICRO |
2022+ |
MSOP8 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NICHIA |
2022+ |
SMD |
870 |
原厂原装,假一罚十 |
|||
NICHIA |
2023+ |
3014(0.52) |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NICHIA |
23+ |
1206 |
9868 |
专做原装正品,假一罚百! |
|||
NHIA |
23+ |
NA/ |
5750 |
原装现货,当天可交货,原型号开票 |
|||
NICHIA |
2023+ |
3014(0.52) |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
NESG4030M14芯片相关品牌
NESG4030M14规格书下载地址
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NESG4030M14数据表相关新闻
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VoxPower的NEVO+1200系列采用紧凑轻巧的封装，可提供1200W功率
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VoxPower的NEVO+600可配置电源采用紧凑的5x3x1.61封装，可提供600W功率
2019-9-6
DdatasheetPDF页码索引
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