型号 功能描述 生产厂家&企业 LOGO 操作
NESG3031M05-T1-A

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG3031M05-T1-A

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG)

文件:673.12 Kbytes Page:9 Pages

CEL

California Eastern Laboratories

CEL

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONGERMANIUMRFTRANSISTOR

文件:334.1 Kbytes Page:9 Pages

CEL

California Eastern Laboratories

CEL

NESG3031M05-T1-A产品属性

  • 类型

    描述

  • 型号

    NESG3031M05-T1-A

  • 功能描述

    射频硅锗晶体管 NPN SiGe High Freq

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2024-4-27 10:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
24+
SOT343
9000
只做原装正品 有挂有货 假一赔十
RENESAS/瑞萨
20+
SOT-343
5500
代理库存,房间现货,有挂就是现货
NECT1K原装
SOT-343
3000
原装长期供货!
收购IC
1525+
FBGA
5083
长期现金收购原装IC
RENESAS/瑞萨
23+24
SOT343
98615
原装现货提供BOM一站式配单服务
NECT1K
22+
SOT-343
32500
郑重承诺只做原装进口货
RENESAS/瑞萨
22+
SOT-343
9600
原装现货,优势供应,支持实单!
NEC
22+
SOT-343
3000
原装正品,支持实单
CEL
SOT343
7906200
RENESAS
20+
SOT343
49000
原装优势主营型号-可开原型号增税票

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