位置:首页 > IC中文资料第6696页 > NESG2107M33
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG2107M33 | NPN SILICON SiGe RF TWIN TRANSISTOR NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in l | RENESAS 瑞萨 | ||
NESG2107M33 | NPN SILICON SiGe RF TWIN TRANSISTOR NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor fT = 12 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in lo | RENESAS 瑞萨 | ||
NESG2107M33 | NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa | RENESAS 瑞萨 | ||
NESG2107M33 | NECs NPN SILICON TRANSISTOR 文件:302.97 Kbytes Page:4 Pages | CEL | ||
NESG2107M33 | NECs NPN SILICON TRANSISTOR | CEL | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa | RENESAS 瑞萨 | |||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa | RENESAS 瑞萨 | |||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa | RENESAS 瑞萨 | |||
封装/外壳:3-SMD,扁平引线 包装:卷带(TR) 描述:RF TRANS NPN 5V 10GHZ 3SMINMOLD 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL | |||
NECs NPN SILICON TRANSISTOR 文件:302.97 Kbytes Page:4 Pages | CEL | |||
NECs NPN SILICON TRANSISTOR 文件:302.97 Kbytes Page:4 Pages | CEL | |||
封装/外壳:3-SMD,扁平引线 包装:卷带(TR) 描述:RF TRANS NPN 5V 10GHZ 3SMINMOLD 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL |
NESG2107M33产品属性
- 类型
描述
- 型号
NESG2107M33
- 制造商
CEL
- 制造商全称
CEL
- 功能描述
NECs NPN SILICON TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
4350 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
2007 |
M33 |
1400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
NEC |
21+ |
SOT723 |
10000 |
原装现货假一罚十 |
|||
NEC |
06+ |
SOT23 |
30000 |
旗舰店 |
|||
NEC |
2450+ |
SOT923-3 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
NEC |
23+ |
SOT23 |
32500 |
原厂原装正品 |
|||
RENESAS/瑞萨 |
25+ |
SOT-23 |
880000 |
明嘉莱只做原装正品现货 |
|||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
NEC |
22+ |
M33 |
3000 |
原装正品,支持实单 |
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NESG2107M33规格书下载地址
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DdatasheetPDF页码索引
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