型号 功能描述 生产厂家 企业 LOGO 操作
NESG2107M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in l

RENESAS

瑞萨

NESG2107M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor fT = 12 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in lo

RENESAS

瑞萨

NESG2107M33

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa

RENESAS

瑞萨

NESG2107M33

NECs NPN SILICON TRANSISTOR

文件:302.97 Kbytes Page:4 Pages

CEL

NESG2107M33

NECs NPN SILICON TRANSISTOR

CEL

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted • 3-pin super lead-less minimold (M33, 0804 PKG) packa

RENESAS

瑞萨

封装/外壳:3-SMD,扁平引线 包装:卷带(TR) 描述:RF TRANS NPN 5V 10GHZ 3SMINMOLD 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

NECs NPN SILICON TRANSISTOR

文件:302.97 Kbytes Page:4 Pages

CEL

NECs NPN SILICON TRANSISTOR

文件:302.97 Kbytes Page:4 Pages

CEL

封装/外壳:3-SMD,扁平引线 包装:卷带(TR) 描述:RF TRANS NPN 5V 10GHZ 3SMINMOLD 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

NESG2107M33产品属性

  • 类型

    描述

  • 型号

    NESG2107M33

  • 制造商

    CEL

  • 制造商全称

    CEL

  • 功能描述

    NECs NPN SILICON TRANSISTOR

更新时间:2025-10-29 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
4350
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
2007
M33
1400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
23+
SOT-23
50000
原装正品 支持实单
NEC
21+
SOT723
10000
原装现货假一罚十
NEC
06+
SOT23
30000
旗舰店
NEC
2450+
SOT923-3
6540
只做原装正品现货或订货!终端客户免费申请样品!
NEC
23+
SOT23
32500
原厂原装正品
RENESAS/瑞萨
25+
SOT-23
880000
明嘉莱只做原装正品现货
CEL
24+
原厂原装
5000
原装正品
NEC
22+
M33
3000
原装正品,支持实单

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