NESG2101M16价格

参考价格:¥4.3561

型号:NESG2101M16-T3-A 品牌:CEL 备注:这里有NESG2101M16多少钱,2026年最近7天走势,今日出价,今日竞价,NESG2101M16批发/采购报价,NESG2101M16行情走势销售排行榜,NESG2101M16报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NESG2101M16

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

NEC

瑞萨

NESG2101M16

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

RENESAS

瑞萨

NESG2101M16

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

NESG2101M16

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:135.74 Kbytes Page:13 Pages

NEC

瑞萨

NESG2101M16

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:227.53 Kbytes Page:3 Pages

CEL

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

RENESAS

瑞萨

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

NEC

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:135.74 Kbytes Page:13 Pages

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:135.74 Kbytes Page:13 Pages

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:135.74 Kbytes Page:13 Pages

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:135.74 Kbytes Page:13 Pages

NEC

瑞萨

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:227.53 Kbytes Page:3 Pages

CEL

NESG2101M16产品属性

  • 类型

    描述

  • 型号

    NESG2101M16

  • 功能描述

    射频硅锗晶体管 RO 551-NESG2101M16-A

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2026-3-15 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
22+
SOT23-3
3000
原装正品,支持实单
NEC
24+
1208
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS/瑞萨
24+
SOT-523
9600
原装现货,优势供应,支持实单!
CEL
16+
SOT-523
15000
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
RENESAS/瑞萨
22+
SOT-523
20000
只做原装
NEC
2447
SOT23
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
CEL
24+
原厂原装
5000
原装正品
CEL
20+
SOT-523
36800
原装优势主营型号-可开原型号增税票
NEC
0826+
6-PIN
9507
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
2022+
6-PIN
9507
原厂代理 终端免费提供样品

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