NESG2101M16价格

参考价格:¥4.3561

型号:NESG2101M16-T3-A 品牌:CEL 备注:这里有NESG2101M16多少钱,2025年最近7天走势,今日出价,今日竞价,NESG2101M16批发/采购报价,NESG2101M16行情走势销售排行榜,NESG2101M16报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NESG2101M16

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

NEC

瑞萨

NESG2101M16

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

RENESAS

瑞萨

NESG2101M16

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

NESG2101M16

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:135.74 Kbytes Page:13 Pages

NEC

瑞萨

NESG2101M16

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:227.53 Kbytes Page:3 Pages

CEL

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

RENESAS

瑞萨

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

NEC

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:135.74 Kbytes Page:13 Pages

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:135.74 Kbytes Page:13 Pages

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:135.74 Kbytes Page:13 Pages

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

文件:135.74 Kbytes Page:13 Pages

NEC

瑞萨

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:227.53 Kbytes Page:3 Pages

CEL

NESG2101M16产品属性

  • 类型

    描述

  • 型号

    NESG2101M16

  • 功能描述

    射频硅锗晶体管 RO 551-NESG2101M16-A

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2025-12-31 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
6-PIN
50000
全新原装正品现货,支持订货
NEC
2450+
6-PIN
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS/瑞萨
22+
SOT-523
20000
只做原装
RENESAS/瑞萨
23+
SOT-523
50000
原装正品 支持实单
CEL
SOT-523
15000
一级代理 原装正品假一罚十价格优势长期供货
NEC
23+
SOT-343
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
RENESAS/瑞萨
23+
SOT-23
89630
当天发货全新原装现货
CEL
24+
原厂原装
5000
原装正品
NEC
24+
1208
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
CEL
2025+
SOT-523
7695
全新原厂原装产品、公司现货销售

NESG2101M16数据表相关新闻