型号 功能描述 生产厂家 企业 LOGO 操作
NESG2046M33

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKA

NEC

瑞萨

NESG2046M33

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage techno

RENESAS

瑞萨

NESG2046M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor fT = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low

RENESAS

瑞萨

NESG2046M33

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

CEL

NESG2046M33

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

文件:292.56 Kbytes Page:4 Pages

CEL

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage techno

RENESAS

瑞萨

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKA

NEC

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage techno

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage techno

RENESAS

瑞萨

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKA

NEC

瑞萨

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

文件:292.56 Kbytes Page:4 Pages

CEL

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

文件:292.56 Kbytes Page:4 Pages

CEL

NESG2046M33产品属性

  • 类型

    描述

  • 型号

    NESG2046M33

  • 制造商

    CEL

  • 制造商全称

    CEL

  • 功能描述

    NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

更新时间:2025-10-29 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
5000
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
24+
SOT343
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
NEC
18+
SOT343
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
24+
SOT343
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SOT-343SO
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
21+
SOT-343
10000
原装现货假一罚十
NEC
2450+
SOT343
6540
只做原装正品现货或订货!终端客户免费申请样品!
CEL
24+
原厂原装
5000
原装正品
NEC(日电电子)
2526+
Original
50000
只做原装优势现货库存,渠道可追溯
NEC
22+
SOT343
3000
原装正品,支持实单

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