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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG204619 | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 |   | |
NESG204619 | NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage technology | RENESAS 瑞萨 | | |
NESG204619 | NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 文件：320.74 Kbytes Page：4 Pages | CEL | | |
NESG204619 | NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION | CEL | | |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage technology | RENESAS 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage technology | RENESAS 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage technology | RENESAS 瑞萨 | | ||
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 | | ||
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 文件：320.74 Kbytes Page：4 Pages | CEL | | ||
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 文件：320.74 Kbytes Page：4 Pages | CEL | |
NESG204619产品属性
- 类型
描述
- 型号
NESG204619
- 制造商
CEL
- 制造商全称
CEL
- 功能描述
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
26+ |
220 |
现货供应 |
||||
RENESAS/瑞萨 |
22+ |
SOT-523 |
20000 |
只做原装 |
|||
POWER SUPPLY |
25+ |
71 |
公司优势库存 热卖中! |
||||
MW 台湾明纬 |
25+ |
- |
499 |
全新原装 |
|||
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
MW |
23+ |
模块 |
1000 |
原装正品,假一罚十 |
|||
MEANWEL |
24+ |
模块 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
CEL |
19+ |
SOT-523 |
200000 |
||||
CEL |
20+ |
SOT-523 |
36800 |
原装优势主营型号-可开原型号增税票 |
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DdatasheetPDF页码索引
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