位置：首页 > IC中文资料第6828页 > NESG204619
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG204619 | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 |   | |
NESG204619 | NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage technology | RENESAS 瑞萨 | | |
NESG204619 | NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 文件：320.74 Kbytes Page：4 Pages | CEL | | |
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage technology | RENESAS 瑞萨 | | ||
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage technology | RENESAS 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage technology | RENESAS 瑞萨 | | ||
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V • 3-PIN SUPER MINIMOLD (19) PACKAGE | NEC 瑞萨 | | ||
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 文件：320.74 Kbytes Page：4 Pages | CEL | | ||
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 文件：320.74 Kbytes Page：4 Pages | CEL | |
NESG204619产品属性
- 类型
描述
- 型号
NESG204619
- 制造商
CEL
- 制造商全称
CEL
- 功能描述
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
18+ |
SOT343 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
24+ |
NA/ |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
24+ |
SOT343 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
CEL |
20+ |
SOT-523 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
SOT-343SO |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS/瑞萨 |
22+ |
SOT-523 |
20000 |
只做原装 |
|||
CEL |
2025+ |
SOT-523 |
7695 |
全新原厂原装产品、公司现货销售 |
|||
CEL |
25+ |
3-SMD 扁平引线 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
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DdatasheetPDF页码索引
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