位置：首页 > IC中文资料第7162页 > NE688
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE688 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a | NEC 瑞萨 |   | |
NE688 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：347.7 Kbytes Page：20 Pages | CEL | | |
NE688 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR | CEL | | |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package | NEC 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a | NEC 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a | NEC 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a | NEC 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a | NEC 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a | NEC 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a | NEC 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a | NEC 瑞萨 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The NE688M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/flat lead style M03 package is ideal for todays portable wireless | NEC 瑞萨 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The NE688M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/flat lead style M13 package is ideal for todays portable wireless | NEC 瑞萨 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The NE688M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/ceramic substrate style M23 package is ideal for todays portable w | NEC 瑞萨 | | ||
NONLINEAR MODEL 文件：28.93 Kbytes Page：1 Pages | NEC 瑞萨 | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：347.7 Kbytes Page：20 Pages | CEL | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：347.7 Kbytes Page：20 Pages | CEL | | ||
NONLINEAR MODEL 文件：25.53 Kbytes Page：1 Pages | NEC 瑞萨 | | ||
封装/外壳：SOT-523 包装：卷带（TR）剪切带（CT） 描述：RF TRANS NPN 6V 5GHZ 3SMINIMOLD 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
封装/外壳：SOT-523 包装：卷带（TR）剪切带（CT） 描述：TRANSISTOR NPN 2GHZ SMD 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：347.7 Kbytes Page：20 Pages | CEL | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：347.7 Kbytes Page：20 Pages | CEL | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：347.7 Kbytes Page：20 Pages | CEL | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：347.7 Kbytes Page：20 Pages | CEL | | ||
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR 文件：347.7 Kbytes Page：20 Pages | CEL | | ||
NPN SILICON TRANSISTOR 文件：43.7 Kbytes Page：3 Pages | CEL | | ||
NPN SILICON TRANSISTOR 文件：23.72 Kbytes Page：2 Pages | CEL | | ||
NPN SILICON TRANSISTOR | RENESAS 瑞萨 | | ||
NPN SILICON TRANSISTOR | RENESAS 瑞萨 | | ||
Nichrome Resistor Networks on Ceramic Substrates • RoHS Compliant • Unique passivation coating eliminates moisture concerns and allows for use in applications traditionally restricted to tantalum nitride • Outperforms other thin film resistor materials providing excellent tolerances, ratio matching, temperature coefficient, and temperature | TTELEC | | ||
Fast Ethernet Cat5e Data Double-Ended Cordset Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded black M12 Standard to male straight RJ45-coded black RJ45 Field Attachable, shielded, 30 V AC / 42 V DC, 1.5 A; PUR green cable, 4-wires, 2x2x0.34 mm² | BELDEN 百通 | | ||
RECTIFIERS ASSEMBLIES High Voltage Stacks ● Current rating to 0.6A ● VRRM 10kV to 25kV ● Only fused-in-glass diodes used ● 150°C junction temperature ● Surge ratings to 20A ● Controlled avalanche characteristics ● MIL-PRF-19500 Similarity ● Sn/Pb terminations | Microsemi 美高森美 | | ||
Nichrome Resistor Networks on Ceramic Substrates • RoHS Compliant • Unique passivation coating eliminates moisture concerns and allows for use in applications traditionally restricted to tantalum nitride • Outperforms other thin film resistor materials providing excellent tolerances, ratio matching, temperature coefficient, and temperature | TTELEC | | ||
688 Series Lead-Free, 6x25mm Fuse 文件：685.57 Kbytes Page：3 Pages | Littelfuse 力特 | |
NE688产品属性
- 类型
描述
- 型号
NE688
- 制造商
CEL
- 制造商全称
CEL
- 功能描述
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
SOT-423 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NEC |
24+ |
NA/ |
1880 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ZXV |
20+ |
SOT-523 |
90000 |
原装现货支持BOM配单服务 |
|||
NEC(VA) |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
RENESAS/瑞萨 |
25+ |
SOT-423 |
20300 |
RENESAS/瑞萨原装特价NE68819即刻询购立享优惠#长期有货 |
|||
NEC |
22+ |
SOT143 |
3000 |
原装正品,支持实单 |
|||
NEC |
24+ |
SOT23-3 |
8000 |
新到现货，只做全新原装正品 |
|||
RENESAS/瑞萨 |
23+ |
SOT143 |
26600 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC |
24+ |
SOT23-3 |
5000 |
全新原装正品,现货销售 |
|||
NEC |
2016+ |
SOT23-3 |
592 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
NE688芯片相关品牌
NE688规格书下载地址
NE688参数引脚图相关
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- NE68739-T1
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- NE68733-T1
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- NE68730-T1
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- NE68519
- NE68518
- NE685
- NE68337
- NE68139
- NE68135
- NE68133
- NE68130
- NE68119
- NE68118
- NE68100
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