NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

NPN SILICON HIGH FREQUENCY TRANSISTOR

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NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

NONLINEAR MODEL

PRECISION TIMERS NONLINEAR MODEL

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

NPN SILICON TRANSISTOR

DESCRIPTION The NE680M03 transistor is designed for low noise, high gain, and low cost applications. This high fT part is ideal for low voltage/low current applications. NECs new low profile/flat lead style M03 package is ideal for todays portable wireless applications. The NE680 is also availabl

NONLINEAR MODEL

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NONLINEAR MODEL

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封装/外壳：SOT-523 包装：卷带（TR） 描述：RF TRANS NPN 10V 10GHZ SOT523 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SOT-523 包装：卷带（TR） 描述：RF TRANS NPN 10V 10GHZ SOT523 分立半导体产品 晶体管 - 双极（BJT）- 射频

NONLINEAR MODEL

文件：30.1 Kbytes Page：1 Pages

NONLINEAR MODEL

NONLINEAR MODEL

文件：30.12 Kbytes Page：1 Pages

RF TRANS NPN 10V 10GHZ SOT143R

RF TRANS NPN 10V 10GHZ SOT143R

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity •