位置：首页 > IC中文资料第327页 > NE552R679A-T1-A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICON POWER MOS FET 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using ou | RENESAS 瑞萨 |   | ||
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS 文件：68.5 Kbytes Page：9 Pages | NEC 瑞萨 | | ||
SILICON POWER MOS FET 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using ou | RENESAS 瑞萨 | | ||
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS 文件：68.5 Kbytes Page：9 Pages | NEC 瑞萨 | |
NE552R679A-T1-A产品属性
- 类型
描述
- 型号
NE552R679A-T1-A
- 制造商
Renesas Electronics Corporation
- 功能描述
RF POWER TRANSISTOR LDMOS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FET |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS(瑞萨)/IDT |
20+ |
- |
1000 |
||||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
UPC |
24+ |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
UPC |
2450+ |
6540 |
只做原装正品现货!或订货假一赔十! |
||||
UPC |
23+ |
26166 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
PHI |
23+ |
SOP-8 |
500 |
专营高频管模块,全新原装! |
|||
Sig |
24+ |
DIP |
3000 |
公司存货 |
|||
NEC |
22+ |
79A-PKG |
20000 |
公司只做原装 品质保障 |
|||
PHI |
00+ |
SMD8 |
235 |
全新原装100真实现货供应 |
NE552R679A-T1-A芯片相关品牌
NE552R679A-T1-A规格书下载地址
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NE552R679A-T1-A数据表相关新闻
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DdatasheetPDF页码索引
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