位置：首页 > IC中文资料第3996页 > NE5520279A-A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package | CEL |   | ||
SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 | RENESAS 瑞萨 | | ||
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET 文件：166.31 Kbytes Page：7 Pages | NEC 瑞萨 | |
NE5520279A-A产品属性
- 类型
描述
- 型号
NE5520279A-A
- 功能描述
射频MOSFET电源晶体管 L/S Band Med Power
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
6050 |
原装现货,当天可交货,原型号开票 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
9428 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS |
24+ |
79A |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
0746+ |
900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
NEC |
24+ |
PBF |
990000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
Renesas |
21+ |
- |
20 |
只做原装鄙视假货15118075546 |
|||
NEC |
25+ |
2789 |
全新原装自家现货!价格优势! |
||||
RENESAS |
25+23+ |
NA |
25249 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
22+ |
SMD |
3000 |
原装正品,支持实单 |
NE5520279A-A芯片相关品牌
NE5520279A-A规格书下载地址
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DdatasheetPDF页码索引
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