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NE38018价格
参考价格：￥4.5500
型号：NE38018-T1 品牌：NEC 备注：这里有NE38018多少钱，2025年最近7天走势，今日出价，今日竞价，NE38018批发/采购报价，NE38018行情走势销售排行榜，NE38018报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE38018 | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES ○ Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm | NEC 瑞萨 |   | |
NE38018 | GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) DESCRIPTION The NE38018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size an | CEL California Eastern Labs | | |
NE38018 | Hetero Junction Field Effect transistor FEATURES • Super Low noise figure & High Associated Gain NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) TYP. @ f = 2 GHz NF = 0.4 dB TYP., Ga = 20 dB TYP. @ f = 900 MHz • 4 pins super mini mold package • Wg = 800 μ m | RENESAS 瑞萨 | | |
NE38018 | GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) 文件：67.52 Kbytes Page：9 Pages | NEC 瑞萨 | | |
Hetero Junction Field Effect transistor FEATURES • Super Low noise figure & High Associated Gain NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) TYP. @ f = 2 GHz NF = 0.4 dB TYP., Ga = 20 dB TYP. @ f = 900 MHz • 4 pins super mini mold package • Wg = 800 μ m | RENESAS 瑞萨 | | ||
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES ○ Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm | NEC 瑞萨 | | ||
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES ○ Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm | NEC 瑞萨 | | ||
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) 文件：67.52 Kbytes Page：9 Pages | NEC 瑞萨 | | ||
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) 文件：67.52 Kbytes Page：9 Pages | NEC 瑞萨 | | ||
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) 文件：67.52 Kbytes Page：9 Pages | NEC 瑞萨 | | ||
UL Type PV Wire, #18 Str TC, XLPO Ins, 600V PV 90C Dry/Wet Product Description UL Type PV Wire, 18AWG (16x30) Tinned Copper, XLPO Insulation, 600V PV 90C Dry/Wet SUN RES | BELDEN 百通 | |
NE38018产品属性
- 类型
描述
- 型号
NE38018
- 功能描述
MOSFET L-S Band Lo No Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
18+ |
SOT343 |
2022 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
24+ |
NA/ |
400 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
23+ |
SOT343 |
8293 |
||||
NEC |
24+ |
SOT-343 |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
24+ |
SOT343 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
23+ |
65480 |
||||||
SOT-343 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
25+23+ |
SOT-343 |
44451 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
22+ |
SOT-343 |
3000 |
原装正品,支持实单 |
|||
24+ |
3000 |
公司存货 |
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DdatasheetPDF页码索引
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