UL Type PV Wire, #18 Str TC, XLPO Ins, 600V PV 90C Dry/Wet

Product Description UL Type PV Wire, 18AWG (16x30) Tinned Copper, XLPO Insulation, 600V PV 90C Dry/Wet SUN RES

包装：盒 描述：BIT SET PHIL/SLOT W/HOLDER 9PC 工具 螺丝和螺母起子 - 套件

UL Type PV Wire, #18 Str TC, XLPO Ins, 600V PV 90C Dry/Wet

Product Description UL Type PV Wire, 18AWG (16x30) Tinned Copper, XLPO Insulation, 600V PV 90C Dry/Wet SUN RES

包装：盒 描述：BOX STEEL 18.03\ 盒子，外壳，机架 箱

L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET

FEATURES ○ Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION The NE38018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size an

Hetero Junction Field Effect transistor

FEATURES • Super Low noise figure & High Associated Gain NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) TYP. @ f = 2 GHz NF = 0.4 dB TYP., Ga = 20 dB TYP. @ f = 900 MHz • 4 pins super mini mold package • Wg = 800 μ m

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

文件：67.52 Kbytes Page：9 Pages