N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

60V N-Channel

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo

60V N-Channel

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

N-Channel 60-V (D-S) MOSFET

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N 沟道增强型场效应晶体管 60V，4A，100mΩ

N 沟道逻辑电平增强型场效应晶体管，60V，4A，100mΩ

N-Channel 60-V (D-S) MOSFET

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Precision Vise Combinations

Model 201 Features: > The easy-to-use single knob controls head movement through 3-planes: 210° Tilt, 360° Turn & 360° Rotation > Fine/coarse adjusting knob controls jaw pressure for delicate work > Grooved jaws are excellent for holding small objects and are made of reinforced thermal compos

Card Edge Connectors 0.156” (3.96mm) Pitch

Features: • 0.156” (3.96mm) contact spacing x 0.140” (3.56mm) row spacing • Accepts 0.062” (1.57mm) nominal thickness P.C. board • Low profile insulator body, 0.470” (11.94mm) • Contact termination options include P.C. tail, wire hole, extender board bends • Dual row configuration • Large va

305 Series Can Tumblers

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PICO 305 Series Fuses - 277V UL913 Intrinsically Safe Fuse

文件：728.76 Kbytes Page：2 Pages

SINGLE CHANNEL COAXIAL, N & TNC CONNECTORS

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