Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (–4.5V to – 20V). Features • –3.5 A, –20 V RDS(ON) = 100 mΩ

Dual 20V P-Channel PowerTrench MOSFET

文件：141.68 Kbytes Page：5 Pages

Dual 20V P-Channel PowerTrench MOSFET

文件：141.68 Kbytes Page：5 Pages

RS-232, #22-15c, SR-PVC, O/A FoilBraid, PVC Jkt, CMG

Product Description Computer EIA RS-232 Cable, 22 AWG stranded (7x30) tinned copper conductors, semi-rigid PVC insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), PVC jacket.

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -20V, -3.5A, RDS(ON) = 100mΩ @VGS = -10V. -1A, RDS(ON) = 190mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

Cat 5e UTP Patch Cable

文件：45.77 Kbytes Page：1 Pages

3.3V, 160-MHz, 1:9 Clock Distribution Buffer

文件：57.93 Kbytes Page：5 Pages

3.3V, 160-MHz, 1:9 Clock Distribution Buffer

文件：57.93 Kbytes Page：5 Pages