Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These

双N沟道增强模式场效应晶体管

SO-8 N沟道增强模式功率场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为提供卓越开关性能和最大限度地降低通态电阻而定制的。 这些器件特别适合需要快速开关、低线路内功率损耗以及抗瞬变能力的磁碟驱动器电机控制、电池供电电路等低电压应用。 •3.5 A，60 V。 RDS(ON) = 0.100 Ω @ VGS = 10 V，RDS(ON) = 0.200 Ω @ VGS = 4.5 V。\n•高密度单元设计，可实现极低的RDS(ON)。\n•采用广泛使用的表面贴装封装，具有高功率和高电流处理能力。\n•采用表面贴装封装的双MOSFET。;

Dual N-Channel 60 V (D-S) 175 째C MOSFET

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3.3A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 200mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

1/6 Inch Optical Size CCIR Black-and-White Solid-State Imaging Device

Overview The LC9945 is a 1/6 inch optical size frame transfer CCD (Charge-coupled device) solid-state imaging device.

Dual N-Channel 60-V (D-S), 175C MOSFET

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Dual N-Channel Enhancement Mode MOSFET

文件：242.04 Kbytes Page：3 Pages