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型号 功能描述 生产厂家 企业 LOGO 操作
NDS8410

Single N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

FAIRCHILD

仙童半导体

NDS8410

Single N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

Single N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low

FAIRCHILD

仙童半导体

Single N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

FAIRCHILD

仙童半导体

Single 30V N-Channel PowerTrench MOSFET

文件:187.46 Kbytes Page:5 Pages

FAIRCHILD

仙童半导体

Single N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

Single 30V N-Channel PowerTrench MOSFET

文件:187.46 Kbytes Page:5 Pages

FAIRCHILD

仙童半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00399 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Single N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

Fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATURES

PHILIPS

飞利浦

0.800-INCH SEVEN SEGMENT DISPLAYS

文件:453.28 Kbytes Page:4 Pages

QT

DUAL POWER OPERATIONAL AMPLIFIER

文件:281.97 Kbytes Page:8 Pages

TOSHIBA

东芝

DUAL POWER OPERATIONAL AMPLIFIER

文件:281.97 Kbytes Page:8 Pages

TOSHIBA

东芝

DUAL POWER OPERATIONAL AMPLIFIER

文件:281.97 Kbytes Page:8 Pages

TOSHIBA

东芝

NDS8410产品属性

  • 类型

    描述

  • 型号

    NDS8410

  • 功能描述

    MOSFET Single N-Ch FET Enhancement Mode

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-22 14:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
04+
SOP8
1289
全新原装绝对自己公司现货
FAI
22+
SOP-8
1000
全新原装现货!自家库存!
仙童
20+
SOP-8
2960
诚信交易大量库存现货
FAIRCHILD/仙童
22+
SOP-8
3000
原装正品,支持实单
NS
25+
SOP8
15300
公司常备大量原装现货,可开13%增票!
FAIRCHILD/仙童
2023+
SOP8
2273
一级代理优势现货,全新正品直营店
FAI
02+
1851
原装现货海量库存欢迎咨询
NS/美国国半
2025+
SOP
5000
原装进口价格优 请找坤融电子!
NS
25+
SOT-8
30000
代理全新原装现货,价格优势
NS
24+
SMD8
6980
原装现货,可开13%税票

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