型号 功能描述 生产厂家&企业 LOGO 操作
NDL5561P

1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

NDL5561P

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

NDL5561P

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

NDL5561P

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

NEC

瑞萨

NDL5561P

PHOTO DIODE

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs AVALANCHE PHOTO DIODE MODULE

RENESAS

瑞萨

NDL5561P

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

PHOTO DIODE

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs AVALANCHE PHOTO DIODE MODULE

RENESAS

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

NEC

瑞萨

PHOTO DIODE

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs AVALANCHE PHOTO DIODE MODULE

RENESAS

瑞萨

PHOTO DIODE

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs AVALANCHE PHOTO DIODE MODULE

RENESAS

瑞萨

PHOTO DIODE

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs AVALANCHE PHOTO DIODE MODULE

RENESAS

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

PHOTO DIODE

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs AVALANCHE PHOTO DIODE MODULE

RENESAS

瑞萨

PHOTO DIODE

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs AVALANCHE PHOTO DIODE MODULE

RENESAS

瑞萨

PHOTO DIODE

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs AVALANCHE PHOTO DIODE MODULE

RENESAS

瑞萨

PHOTO DIODE

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs AVALANCHE PHOTO DIODE MODULE

RENESAS

瑞萨

2.9 GHz Ultralow Distortion RF/IF Differential Amplifier

GENERAL DESCRIPTION The ADL5561 is a high performance differential amplifier optimized for RF and IF applications. The amplifier offers low noise of 2.1 nV/√Hz and excellent distortion performance over a wide frequency range, making it an ideal driver for high speed 8-bit to 16-bit analog-to-di

AD

亚德诺

2.9 GHz Ultralow Distortion RF/IF Differential Amplifier

GENERAL DESCRIPTION The ADL5561 is a high performance differential amplifier optimized for RF and IF applications. The amplifier offers low noise of 2.1 nV/√Hz and excellent distortion performance over a wide frequency range, making it an ideal driver for high speed 8-bit to 16-bit analog-to-di

AD

亚德诺

20 (7/28) AWG Tinned Copper

文件:411.55 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

2.9 GHz Ultralow Distortion RF/IF Differential Amplifier

文件:760.89 Kbytes Page:25 Pages

AD

亚德诺

2.9 GHz Ultralow Distortion RF/IF Differential Amplifier

文件:760.89 Kbytes Page:25 Pages

AD

亚德诺

更新时间:2025-8-15 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UNKNOWN
23+
NA
286
专做原装正品,假一罚百!
Original
25+23+
New
33687
绝对原装正品现货,全新深圳原装进口现货
NEC/CEL
23+
25640
原厂授权一级代理,专业海外优势订货,价格优势、品种
NEC
2000
光纤线
340
原装现货海量库存欢迎咨询
CEL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
24+
3000
公司存货
NEC
24+
NA/
10
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
23+
SMD
50000
全新原装正品现货,支持订货

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