isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.75Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，600V，10A， 0.75 Ù，单 N 沟道，TO-220FP

N-Channel Power MOSFET

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N-Channel Power MOSFET 0.65 ?? 600 Volts

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N-Channel Power MOSFET

文件：118.01 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：118.01 Kbytes Page：7 Pages

N-Channel Power MOSFET 0.65 ?? 600 Volts

文件：138.25 Kbytes Page：6 Pages

N-Channel Power MOSFET 600 V, 0.75 Ohm

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N-Channel 650V (D-S)Power MOSFET

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N-Channel Power MOSFET 600 V, 0.75 \u0002Ohm

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 600V 10A TO-220FP 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel 650V (D-S)Power MOSFET

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N-Channel Power MOSFET 600 V, 0.75 Ohm

文件：119.98 Kbytes Page：8 Pages

N-Channel Power MOSFET

文件：118.01 Kbytes Page：7 Pages

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

N-Channel 6 50V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

文件：2.33382 Mbytes Page：11 Pages

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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10A 600V N-channel Enhancement Mode Power MOSFET

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