Dual P-Channel Enhancement Mode Field Effect Transistor

General Description These dual P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fas

Dual P-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Dual P-Channel 20V (D-S) MOSFET

Product Summary Vdss=60V ID= 0.5A Rps(oNn)=1.7Q@VGs=-10V

MOSFET - Dual P-Channel, POWERTRENCH

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双 P 沟道增强型场效应晶体管 -60V，-0.34A，5Ω

TRI-BAND GSM/DCS/PCS LNA

DESCRIPTION The STB7003 is a tri-band LNA designed for GSM/DCS/ PCS applications. The GC pin sets the LNA gain levels. The innovative architecture implemented allows to reach very low current consumption. LNA1 works at 0.9-1.0 GHz and LNA2 over the 1.8-2GHz frequency range. • SUPPLY VOLTAGE 2.8V

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY

Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A AND ULN7003LW are designed for interfacing between TTL or CMOS logic and a variety of peripheral loads. The seven open-collector Darlington outputs are specified for 135 V minimum breakdown and

Graphite Brush

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Inside DC Block

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