Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and

N- and P-Channel 60V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N- and P-Channel 60 V (D-S) MOSFET

APPLICATIONS Replace Digital Transistor, Level-Shifter Power Supply Converter Circuits Battery Operated Systems

文件：279.549 Kbytes Page：0 Pages

Field Effect Transistor - Dual, N & P-Channel, Enhancement Mode

文件：363.11 Kbytes Page：10 Pages

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

900 MHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7001 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 900-MHz applications. STB7001 is housed in a small industry-standard MSOP8 surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8 dimensions are

C-band Crossbar/Fan-Out

文件：536.06 Kbytes Page：2 Pages

toggle switches

文件：79.37 Kbytes Page：1 Pages

toggle switches

文件：79.37 Kbytes Page：1 Pages