型号 功能描述 生产厂家 企业 LOGO 操作
NDB708A

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NDB708A

N-Channel Enhancement Mode Field Effect Transistor

文件:74.91 Kbytes Page:6 Pages

Fairchild

仙童半导体

NDB708A

N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

文件:74.91 Kbytes Page:6 Pages

Fairchild

仙童半导体

(22.2 mm) Single Turn Conductive Plastic Precision Potentiometer

FEATURES • Virtually infinite resolution • Bushing mount and servo mount types available • Rotational life exceeds 20 million shaft revolutions • Co-molded track and multi-finger wiper provide low noise signal • Ohmic value range: 500  to 50 k • Material categorization: for definitions o

VishayVishay Siliconix

威世威世科技公司

SOLID STATE DIGITAL METER MODULES

A P P L I C A T I O N S These models offer a variety of functions, sizes, voltages and customizable options to fit most applications. Ideal for OEMs, contract manufacturers, and panel makers for monitoring equipment usage, scheduling maintenance, warranty validation, rental/leasing use and mo

Curtis

科蒂斯

Compact, Portable IP67 Military Fast Ethernet Switch

PRODUCT DESCRIPTION Driven by rapid advancement and lower costs, Ethernet is becoming the standard for IP-based components in a wide range of military and commercial land, sea, and air applications. When building communications where data prioritization is not a concern and the amount of tra

ENERCON

Industrial Ethernet Switch

文件:777.72 Kbytes Page:3 Pages

REDLION

Network Interface Device

文件:393.19 Kbytes Page:1 Pages

Bourns

伯恩斯

NDB708A产品属性

  • 类型

    描述

  • 型号

    NDB708A

  • 功能描述

    MOSFET DISC BY MFG 2/02

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-31 11:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
6000
面议
19
DIP/SMD
-
23+
NA
25600
原厂授权一级代理,专业海外优势订货,价格优势、品种
FAIRCHILD/仙童
23+
TO-263
50000
全新原装正品现货,支持订货
FAI
25+23+
TO263
74232
绝对原装正品现货,全新深圳原装进口现货
国半
23+24
TO-263
59630
主营原装MOS,二三级管,肖特基,功率场效应管
NSC
05+
原厂原装
1651
只做全新原装真实现货供应
VBSEMI/微碧半导体
24+
TO263
7800
全新原厂原装正品现货,低价出售,实单可谈
国半
TO-263
68500
一级代理 原装正品假一罚十价格优势长期供货
24+
3000
公司存货
VB
21+
TO-263AB
10000
原装现货假一罚十

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