isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

High Voltage Input Amplifier Circuit for Hi-Fi Power Amplifier

■ Overview The AN7062N is a high voltage integrated circuit designed for pre-driver of 60W-class Hi-Fi audio amp. Stereo operation is enabled due to two amplifiers built-in. ■ Features • High voltage • Low noise : Vni = 2.5µV (typ.) • Low distortion : THD = 0.003 (typ.) • Good channel separa

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 800 V Mean on-state current 4305 A Surge current 70 kA

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu