N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

This series of detectors can detect fixed voltages from 2.2V to 7V.

Low power consumption, typical value: 2.0uA Wide operating voltage range: 1.5V～12V Low temperature drift detection voltage: typical value ±50pp m/℃ Built-in hysteresis feature High-precision voltage value detection: ±3 Small package: SOT89-3, TO92, SOT23-3

LED SPACER MOUNTS

[KEYSTONE] “UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-1 3/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps

LED SPACER MOUNTS

[KEYSTONE] “UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-1 3/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps

Micro reflex sensor

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B - Indoor keyed

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