N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=65mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=65mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

Compact,PortableIP67MilitaryFastEthernetSwitch

PRODUCTDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinawiderangeofmilitaryandcommercial land,sea,andairapplications.Whenbuilding communicationswheredataprioritizationisnota concernandtheamountoftrafficislow,unmanaged, FastEthernetswitche

PulseEncapsulatedP.C.BoardMount

Features Theseferritecoredtransformersarefullyencapsulatedinahighgradeblackmoldedcase withaUL94V-Orating. Unitsareintendedforwidebandandpulseapplicationsincludingthyristor/triacfiring circuits. Peakpulsevoltageratingmaximumof250V. Insulationtestedto1,000

횠6.35mmmountingBlackanodisedaluminiumhousing

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LowProfile

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AluminumCapacitors125°C,Non-Polar,Miniature

文件：71.27 Kbytes Page：3 Pages