isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

POWER RECTIFIERS(5.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST POWER RECTIFIERS 5.0 AMPERES 500 -- 1000 VOLTS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE- 20 to 100 Volts CURRENT- 5.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,high efficiency • High surge capacity • For

POWER RECTIFIERS(5.0A,500-1000V)

ULTRA FAST RECTIFIERS 5.0 AMPERES 500-1000 VOLTS

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Surface Mount Schkttky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 5.0 AMPERES 70 - 100 VOLTS