isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

文件：356.82 Kbytes Page：7 Pages

N-Channel Enhancement Mode Field Effect Transistor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N 沟道逻辑电平增强型场效应晶体管 60V，26A，35mΩ

Analog addressable low-flow photoelec-tronic non-relay duct smoke sensor

Description The Gamewell-FCI Velociti® Series, low-flow photoelectronic air duct smoke sensors are capable of sensing smoke in air velocities from 100 to 4,000 feet per minute (0.5 to 20.32 m/sec.). ADPF sensors feature low-flow technology that enables duct smoke detection throughout a broad ran

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