isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N 沟道逻辑电平增强型场效应晶体管 60V，26A，35mΩ

这些逻辑电平N沟道增强模式功率场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低通态电阻，提供卓越的开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件特别适合需要快速开关、低线路内功率损耗以及抗瞬变能力的汽车、DC/DC转换器、PWM电机控制和其他电池供电电路等低电压应用。 •26 A，60 V。 RDS(ON) = 0.05Ω @ VGS= 5 V，RDS(ON) = 0.035Ω @ VGS= 10 V。\n•在高温下额定的临界DC电气参数。\n•耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。\n•175°C最大结温额定值。\n•采用高密度单元设计，可实现极低的RDS(ON)。\n•TO-220和TO-263 (D2PAK)封装，适用于通孔和表面贴装应用。;

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：358.95 Kbytes Page：7 Pages

TRISILTM

DESCRIPTION The LS50xxB series has been designed to protect telecommunication equipment against lightning and transients induced by AC power lines. Its high surge current capability makes the LS50xxB a reliable protection device for very exposed equipment, or when series resistors are very low.

Zener Diode, 1/2 Watt 짹5 Tolerance

Features: ● Zener Voltage 2.4 to 200V ● DO35 Package

1.3 GHz I2C-bus controlled low phase noise frequency synthesizer

文件：119.18 Kbytes Page：24 Pages

1.3 GHz I2C-bus controlled low phase noise frequency synthesizer

文件：119.18 Kbytes Page：24 Pages

1.3 GHz I2C-bus controlled low phase noise frequency synthesizer

文件：119.18 Kbytes Page：24 Pages