isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

文件：73.05 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

文件：73.05 Kbytes Page：6 Pages

Sanding

文件：76.71 Kbytes Page：1 Pages

Detectable Buried Barricade Tapes 400 Series

文件：53.73 Kbytes Page：2 Pages

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

文件：597.06 Kbytes Page：3 Pages

Interconnection Cord with Plug G-Horizontal, Angled

文件：303.45 Kbytes Page：2 Pages

GP-IB Cable Assembly EMI/RFI Shielding Version

文件：211.39 Kbytes Page：3 Pages