位置：首页 > IC中文资料第408页 > NDB4060
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NDB4060 | N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a | FAIRCHILD 仙童半导体 |   | |
NDB4060 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NDB4060 | N-Channel Enhancement Mode Field Effect Transistor | ONSEMI 安森美半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe | FAIRCHILD 仙童半导体 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor | ONSEMI 安森美半导体 | | ||
14-Stage, 12-Stage Ripple Carry Binary Counters 文件：136.27 Kbytes Page：6 Pages | NSC 国半 | | ||
14-Stage, 12-Stage Ripple Carry Binary Counters 文件：136.27 Kbytes Page：6 Pages | NSC 国半 | | ||
14-Stage, 12-Stage Ripple Carry Binary Counters 文件：136.27 Kbytes Page：6 Pages | NSC 国半 | | ||
14-Stage, 12-Stage Ripple Carry Binary Counters 文件：136.27 Kbytes Page：6 Pages | NSC 国半 | | ||
14-Stage, 12-Stage Ripple Carry Binary Counters 文件：136.27 Kbytes Page：6 Pages | NSC 国半 | |
NDB4060产品属性
- 类型
描述
- 型号
NDB4060
- 功能描述
MOSFET N-Channel FET Enhancement Mode
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
D2PAK(TO-263) |
7734 |
样件支持,可原厂排单订货! |
|||
onsemi(安森美) |
25+ |
D2PAK(TO-263) |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
NS/国半 |
0413+12+ |
TO-263 |
2400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
2023+ |
TO263 |
50000 |
原装现货 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
1600 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
HARRIS/哈里斯 |
23+ |
D2PAK |
25600 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
国半 |
TO-263 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NS |
25+ |
TO-223 |
2987 |
绝对全新原装现货供应! |
|||
24+ |
3000 |
公司存货 |
|||||
国半 |
23+24 |
TO-263 |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
NDB4060规格书下载地址
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DdatasheetPDF页码索引
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