N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fast Ethernet Cat5e Data Double-Ended Cordset

Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Female straight D-coded black M12 Standard to female straight D-coded black M12 Standard, shielded, 50 V AC / 60 V DC, 4 A; TPE green cable, 4-wires, 0.38 mm²

Standalone Linear NiMH/NiCd Fast Battery Charger

DESCRIPTION The LTC® 4060 is a complete fast charging system for NiMH or NiCd batteries. Just a few external components are needed to design a standalone linear charging system. FEATURES ■ Complete Fast Charger Controller for Single, 2-, 3- or 4-Series Cell NiMH/NiCd Batteries ■ No F

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 17A, RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

Half Facepiece Respirators 7500 Series, Ultimate Reusable

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Dual Channel Function/Arbitrary Waveform Generators

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