N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

N-Channel 60 V (D-S) MOSFET

文件：1.32123 Mbytes Page：9 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

Features • 0 to 100 adjustability. • Voltage programmable. • Voltage monitor. • Remote on/off control. • EMI/RFI shielding. • Short circuit, reverse polarity protection. • Arc protection.

B - Indoor keyed

文件：107.13 Kbytes Page：4 Pages

B - Indoor keyed

文件：107.12 Kbytes Page：4 Pages

B - Indoor keyed

文件：106.9 Kbytes Page：4 Pages

B - Indoor keyed

文件：102.69 Kbytes Page：4 Pages