ESD Protection Diode

Features • Transient protection for data lines to IEC 61000-4-2(ESD) 15KV(air), 8KV(contact) • Small package for use in portable electronics Applications • ESD Protection

ESD Protection Diode

Features • Transient protection for data lines to IEC 61000-4-2(ESD) 15KV(air), 8KV(contact) • Small package for use in portable equipment. Applications • ESD Protection

Diode Rectifier Modules

FEATURES • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • These devices are ideally suited for power converters, motors drives and other app

可控硅/二极管模块

34 mm PowerBLOCK 快速二极管模块使用绝缘铜基板，采用高可靠性的压接技术设计和组装。 • 具有高可靠性的压接技术\n• 工业标准封装\n• 电气绝缘基板\n• 故障时短路\n• 具有高稳健性\n\n优势:\n• 故障保护\n• 防止电弧失效\n• 易于安装\n• 由于高过载能力，可实现无熔丝设计\n• UL 认证;

可控硅/二极管模块

34 mm PowerBLOCK 快速二极管模块使用绝缘铜基板，采用高可靠性的压接技术设计和组装。 • 具有高可靠性的压接技术\n• 工业标准封装\n• 电气绝缘基板\n• 故障时短路\n• 具有高稳健性\n\n优势:\n• 故障保护\n• 防止电弧失效\n• 易于安装\n• 由于高过载能力，可实现无熔丝设计\n• UL 认证;

34 毫米单整流二极管模块，采用 1600 V 压接技术

34 mm PowerBLOCK 快速二极管模块使用绝缘铜基板，采用高可靠性的压接技术设计和组装。 • 具有高可靠性的压接技术\n• 工业标准封装\n• 电气绝缘基板\n• 故障时短路\n• 具有高稳健性\n\n优势:\n• 故障保护\n• 防止电弧失效\n• 易于安装\n• 由于高过载能力，可实现无熔丝设计\n• UL 认证;

Rectifier Diode Module

文件：592.25 Kbytes Page：9 Pages

封装/外壳：模块 包装：带盒（TB） 描述：DIODE BG-PB34-1 分立半导体产品 二极管 - 整流器 - 单

Netz-Dioden-Modul Rectifier Diode Module

文件：546.61 Kbytes Page：10 Pages

封装/外壳：模块 包装：卷带（TR） 描述：DIODE GP 1.2KV 171A BG-PB34-1 分立半导体产品 二极管 - 整流器 - 单

Netz-Dioden-Modul Rectifier Diode Module

文件：546.61 Kbytes Page：10 Pages

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

Silicon NPN Transistor Audio/Video Amplifier

Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: • High Collector–Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE