丝印代码：S；Antenna Switching Diode

Features • Low capacitance : Max.0.4pF • Low series resistance : rs= 1.0Ω(Typ.)@IF=10mA • UHF/VHF Band RF Switch Applications

High Frequency Diode

Antenna Switching Diode Array ( 4 in 1)

Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

Antenna Switching Diode Array ( 6 in 1)

Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]

ND102_1

文件：173.87 Kbytes Page：4 Pages

ND102M4AL_1

文件：186.99 Kbytes Page：5 Pages

ND102M4L_1

ND102M4L_1

文件：139.77 Kbytes Page：5 Pages

Antenna Switching Diode Array ( 6 in 1)

ND102M6L_1

文件：162.5 Kbytes Page：5 Pages

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Details complets sur le site du fabricant:

Product Description Full details on the manufacturers website: IDEAL INDUSTRIES, INC

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

0.5/2.5 GHz UHF LO BUFFER AMPLIFIER

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co